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jmnic product specification silicon npn power transistors 2SC3637 description ? with to-3pn package ? high voltage ,high speed ? high reliability applications ? ultrahigh-definition crt display horizontal deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 20 a p c collector power dissipation t c =25 ?? 90 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
jmnic product specification 2 silicon npn power transistors 2SC3637 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 500 v v cesat collector-emitter saturation voltage i c =5a ;i b =1a 2.0 v v besat base-emitter saturation voltage i c =5a ;i b =1a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 | a i ces collector cut-off current v ce =900v; r be =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe dc current gain i c =1a ; v ce =5v 8 switching times t s storage time 3.0 | s t f fall time v cc =200v;i c =5a; i b1 =1a; i b2 =-2a 0.1 0.2 | s
jmnic product specification 3 silicon npn power transistors 2SC3637 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)
jmnic product specification 4 silicon npn power transistors 2SC3637

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